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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV33F VHF linear power transistor
Product specification 1996 Oct 10
Philips Semiconductors
Product specification
VHF linear power transistor
FEATURES * Internally matched input for wideband operation and high power gain * Diffused emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Primarily intended for use in linear VHF amplifiers for television transmitters and transposers. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1 " 6 lead SOT119A capstan package with ceramic cap. 2 All leads are isolated from the flange.
1 2
BLV33F
PINNING - SOT119A PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter base collector emitter emitter DESCRIPTION
handbook, halfpage
c b e
3
4
5
6
MAM269
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance in a common emitter push-pull test circuit. MODE OF OPERATION CW, class-A CW, class-AB Notes 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. 2. Television service (negative modulation, C.C.I.R. system). WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. fvision (MHz) 224.25 224.25 VCE (V) 25 28 IC, IC(ZS) (A) 3.2 0.2 Th (C) 70 25 70 dim(1) (dB) -55 -55 - Po sync (1) (W) >13 typ. 19 typ. 85 GP (dB) >13.5 typ. 14.8 typ. 10.5 30/25 sync compr.(2) sync in/sync out (%)
1996 Oct 10
2
Philips Semiconductors
Product specification
VHF linear power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM VCEO VEBO IC IC(AV) ICM Ptot Prf Tstg Tj PARAMETER collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current peak collector current total power dissipation (DC) RF power dissipation storage temperature operating junction temperature f > 1 MHz Tmb = 25 C f > 1 MHz; Tmb = 25 C CONDITIONS VBE = 0 open base open collector - - - - - - - - -65 - MIN.
BLV33F
MAX. 65 33 4 12.5 12.5 20 133 162 +150 200 V V V A A A W W
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Pdiss = 80 W; Tmb = 82 C; Th = 70 C Pdiss = 80 W; Tmb = 82 C; Th = 70 C Pdiss = 80 W; Tmb = 82 C; Th = 70 C VALUE 1.43 1.17 0.2 UNIT K/W K/W K/W
Rth j-mb(dc) thermal resistance from junction to mounting base (DC dissipation) Rth j-mb(rf) Rth mb-h thermal resistance from junction to mounting base (RF dissipation) thermal resistance from mounting base to heatsink
102 handbook, halfpage
MGG132
handbook, halfpage
200
MGG133
Ptot IC (A) 150
(1) (2)
(W)
10
(3) (2) (1)
100
1 1 10 VCE (V) 102
50 0 50 Th (C) 100
(1) Tmb = 25 C. (2) Th = 70 C. (3) Second breakdown limit (independent of temperature).
(1) Continuous DC (including RF class-A) operation. (2) Continuous RF operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Oct 10
3
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
handbook, full pagewidth
2.0
MGG144
Rth j-h (K/W) 1.8
Th
=1
20
C
100
C
80
C
60
C
40
C
20
1.6
C
0 C
Tj = 200 C 1.4 150 C 125 C 1.2 75 C 100 C 175 C
1.0 0 50 100 Ptot (W) 150
Rth mb-h = 0.2 K/W.
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters.
Example Nominal class-A operation (without RF signal): VCE = 25 V; IC = 3.2 A; Th = 70 C. Figure 4 shows: Rth j-h = max. 1.63 K/W Tj = max. 200 C. Typical device: Rth
j-h
= typ.1.53 K/W
Tj = typ. 192 C.
1996 Oct 10
4
Philips Semiconductors
Product specification
VHF linear power transistor
CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)CES V(BR)CEO V(BR)EBO ICES hFE VCEsat fT PARAMETER CONDITIONS MIN. 65 33 4 - 15 - - - - - TYP. - - - - 50 0.75 680 750 155 88 3
BLV33F
MAX. - - - 1 100 - - - - - -
UNIT V V V mA V MHz MHz pF pF pF
collector-emitter breakdown voltage VBE = 0; IC = 25 mA collector-emitter breakdown voltage open base; IC = 100 mA emitter-base breakdown voltage collector cut-off current DC current gain collector-emitter saturation voltage transition frequency open collector; IE = 10 mA VBE = 0; VCE = 30 V VCE = 25 V; IC = 3 A; note 1 IC = 6 A; IB = 0.6 A; note 1 VCB = 25 V; IE = -3 A; f = 100 MHz; note 2 VCB = 25 V; IE = -6 A; f = 100 MHz; note 2
Cc Cre Ccf Notes
collector capacitance feedback capacitance collector-flange capacitance
VCB = 25 V; IE = ie = 0; f = 1 MHz
IC = 50 mA; VCE = 25 V; f = 1 MHz -
1. Measured under pulse conditions: tp 300 s; 0.02. 2. Measured under pulse conditions: tp 50 s; 0.01.
1996 Oct 10
5
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG130
MGG129
handbook, halfpage
75
handbook, halfpage
600
hFE (1) 50
Cc (pF) 400
(2) 25 200
0 0 5 10 IC (A) 15
0 0 20 VCB (V) 40
Tj = 25 C. (1) VCE = 25 V. (2) VCE = 5 V.
IE = ie = 0; f = 1 MHz; Tj = 25 C.
Fig.5
DC current gain as a function of collector current; typical values.
Fig.6
Collector capacitance as a function of collector-base voltage; typical values.
handbook, halfpage
1000
MGG131
fT (MHz)
handbook, halfpage
10
MGG118
800
IC (A)
(1) (2)
600 1 400
200
0 -0
-5
-10
IE (A)
-15
10-1 0.5
1
1.5
VBE (V)
2
VCB = 25 V; f = 100 MHz; Tj = 25 C.
VCE = 25 V. (1) Th = 70 C. (2) Th = 25 C.
Fig.7
Transition frequency as a function of emitter current; typical values.
Fig.8
Collector current as a function of base-emitter voltage; typical values.
1996 Oct 10
6
Philips Semiconductors
Product specification
VHF linear power transistor
APPLICATION INFORMATION RF performance in VHF class-A operation (linear power amplifier) MODE OF OPERATION fvision (MHz) VCE (V) IC (A) Th (C) 70 CW, class-A 224.25 25 3.2 70 70 25 Note dim(1) (dB) -55 -55 -52 -55 Po sync(1) (W) >13 typ. 14.5 typ. 22 typ. 19
BLV33F
GP (dB) >13.5 typ. 14.5 typ. 14.5 typ. 14.8
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level.
handbook, full pagewidth
C5 +VBB C6 C9 R1 L2 D.U.T. L4 C10 C13 +VCC
C3 50 input C1 L1 L3 C2 C4
C7
C11 L6 L5 C15 50 output
C8
C12
C14
MGG146
Fig.9 Class-A test circuit at fvision = 224.25 MHz.
1996 Oct 10
7
Philips Semiconductors
Product specification
VHF linear power transistor
List of components used in test circuit (see Figs 9 and 10). COMPONENT C1, C15 C2, C4, C12, C14 C3 C5 C6, C10 C7, C8 C9 C11 C13 L1 DESCRIPTION multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 polyester capacitor multilayer ceramic chip capacitor; note 1 solid tantalum capacitor 2 turns of 1.6 mm enamelled Cu wire microchoke stripline; note 2 2 turns of closely wound 1 mm enamelled Cu wire stripline; note 2 2 turns of 1.6 mm enamelled Cu wire carbon resistor 10 30 1 H 30 6 mm x 32.7 mm int. diameter 5 mm leads 2 x 10 mm 6 mm x 24 mm int. diameter 4 mm length 4.5 mm leads 2 x 3 mm VALUE 560 pF, 500 V 4 to 40 pF 10 pF, 500 V 470 nF, 50 V 680 pF, 50 V 47 pF, 500 V 330 nF 68 pF, 500 V 6.8 F, 35 V int. diameter 5 mm length 5 mm leads 2 x 3 mm placed 8 mm from transistor edge DIMENSIONS
BLV33F
CATALOGUE No.
2222 809 08002
2222 856 48474 2222 852 13681
L2 L3 L4 L5 L6
4322 057 01080
R1 Notes
1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (r = 4.5); thickness 116".
1996 Oct 10
8
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
handbook, full pagewidth
115
rivets 50
rivets
rivets
rivets
+VBB
+VCC C13 R1
C2
C5
C6
C10 L4
C9 C14
C3 50 input
L2
C7
C11
L3 C1 L1 C8 C4
L5 L6 C15
50 output
C12
MGG149
Dimensions in mm. The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
Fig.10 Component layout and printed-circuit board for 224.25 MHz class-A test circuit.
1996 Oct 10
9
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
handbook, halfpage
-44 dim -48
MGG134
MGG135
handbook, halfpage
(1)
30
(dB) Gp
15 Gp (dB) 14
dcm (%) 20
(2) (1)
(2)
-52
(2) (1)
13 -56 12 -60 dim 11 -64 10 0 20 30 Po sync (W) 40 0 20 10
Po sync (W)
40
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz. (1) Th = 25 C. (2) Th = 70 C.
VCE = 25 V; IC = 3.2 A; fvision = 224.25 MHz. (1) Th = 25 C. (2) Th = 70 C.
Fig.11 Intermodulation distortion and power gain as a functions of output power.
Fig.12 Cross-modulation distortion as a function of output power.
Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level (see Fig.11). Intermodulation distortion of input signal -70 dB. Two-tone test method (vision carrier 0 dB, sound carrier -7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to -20 dB (see Fig.12). Ruggedness in class-A operation The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR = 50 : 1 through all phases up to 30 W (RMS) or 40 W (PEP) under the following conditions: VCE = 25 V; IC = 3.2 A; Th = 70 C; f = 224.25 MHz; Rth mb-h = 0.2 K/W.
1996 Oct 10
10
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG136
MGG137
handbook, halfpage
1
handbook, halfpage
6
Zi ()
ri xi
ZL ()
4
0
RL 2 XL
-1 50
150
f (MHz)
250
0 50
150
f (MHz)
250
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 C.
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 C.
Fig.13 Input impedance as a function of frequency (series components); typical values.
Fig.14 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
30
MGG138
Gp (dB) 20
10
0 50
150
f (MHz)
250
Class-A operation; VCE = 25 V; IC = 3.2 A; Th = 70 C.
Fig.15 Power gain as a function of frequency; typical values.
1996 Oct 10
11
Philips Semiconductors
Product specification
VHF linear power transistor
RF performance in VHF class-AB operation (C.W.). MODE OF OPERATION CW, class-AB Note f (MHz) 224.25 VCE (V) 28 IC, IC(ZS) (A) 0.2 Th (C) 70 PL (W) 40 85 IC (A) typ. 2.75 typ. 4.25 C (%) typ. 52 typ. 71
BLV33F
GP (dB)(1) typ. 11.5 typ. 10.5
1. Gain compression point of 1 dB is at typical 85 W (minimum 75 W). Using a 3rd-order amplitude transfer characteristic, 1 dB compression corresponds with 30 % sync input / 25 % sync output compression in television service (negative modulation, C.C.I.R. system).
handbook, full pagewidth
+VBB
C6 C7 C10 R1 L4 L2 C15
+VCC
C2 C1 50 L1
C4 L3
C8
D.U.T.
C11
C13 L6 L5
C16 C18 50 C17
MGG147
C3
C5
C9
C12
C14
Fig.16 Class-AB test circuit at fvision = 224.25 MHz.
1996 Oct 10
12
Philips Semiconductors
Product specification
VHF linear power transistor
List of components used in test circuit (see Figs 16 and 17). COMPONENT C1, C18 C2 C3 C4 C5, C14 C6, C10 C7, C15 C8, C9 C11, C12 C13 C16 C17 L1 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer 2 turns of 1.6 mm enamelled Cu wire 3 turns of 1 mm closely wound enamelled Cu wire stripline; note 2 2 turns of 1 mm closely wound enamelled Cu wire stripline; note 2 2 turns of 1.6 mm enamelled Cu wire carbon resistor 10 30 30 VALUE 620 pF, 100 V 27 pF, 500 V 2 to 18 pF 30 pF, 500 V 4 to 40 pF 470 nF, 50 V 680 pF, 50 V 68 pF, 500 V 43 pF, 500 V 39 pF, 500 V 3.3 pF, 500 V 1.4 to 5.5 pF int. diameter 4.5 mm length 4 mm leads 2 x 4 mm int. diameter 5 mm leads 2 x 7 mm 6 mm x 47.8 mm int. diameter 5 mm leads 2 x 8 mm 6 mm x 42.9 mm int. diameter 4 mm length 4 mm leads 2 x 3 mm placed 6.4 mm from transistor edge placed 10 mm from transistor edge DIMENSIONS
BLV33F
CATALOGUE No.
2222 809 09003
2222 809 08002 2222 856 48474 2222 852 13681
2222 809 09001
L2 L3 L4 L5 L6
R1 Notes
1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double Cu-clad printed-circuit board, with epoxy fibre-glass dielectric (r = 4.5); thickness 116".
1996 Oct 10
13
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
handbook, full pagewidth
150
rivets
rivets
57
rivets
rivets
+VBB
+VCC
C10 C3 C6 C7 L2 C8 L3 C9 C5 C14 C12 C15 R1 L4 C11 L5 C13 L6 C16 C18 50 output C17
50 input
C1 C2 L1
C4
MGG151
Dimensions in mm. The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as earth. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane.
Fig.17 Component layout and printed-circuit board for 224.25 MHz class-AB test circuit.
1996 Oct 10
14
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG139
MGG140
handbook, halfpage
100 PL
handbook, halfpage
15
75 c
(W) 80 Gp (dB)
c (%) Gp
60 10 40 50
20
0 0 2 4 6 PS (W) 8
5 0 50 PL (W)
25 100
VCE = 28 V; IC(ZS) = 0.2 A; Th = 70 C; fvision = 224.25 MHz.
VCE = 28 V; IC(ZS) = 0.2 A; Th = 70 C; fvision = 224.25 MHz.
Fig.18 Load power as a function of source power; typical values.
Fig.19 Power gain and efficiency as functions of load power; typical values.
Ruggedness in class-AB operation The BLV33F is capable of withstanding a full load mismatch corresponding to VSWR 2 through all phases) up to 60 W (RMS) and 85 W (PEP) under the following conditions:VCE = 28 V; Th = 70 C; f = 224.25 MHz; Rth mb-h = 0.2 K/W.
1996 Oct 10
15
Philips Semiconductors
Product specification
VHF linear power transistor
BLV33F
MGG141
handbook, halfpage
1
handbook, halfpage
4
MGG142
Zi ()
ri
ZL ()
RL
xi 0 2
XL -1 50
150
f (MHz)
250
0 50
150
f (MHz)
250
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 C.
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 C.
Fig.20 Input impedance as a function of frequency (series components); typical values.
Fig.21 Load impedance as a function of frequency (series components); typical values.
MGG143
handbook, halfpage
20
Gp (dB)
10
0 50
150
f (MHz)
250
Class-AB operation; VCE = 28 V; PL = 80 W (PEP); Th = 70 C.
Fig.22 Power gain as a function of frequency; typical values.
1996 Oct 10
16
Philips Semiconductors
Product specification
VHF linear power transistor
PACKAGE OUTLINE
BLV33F
handbook, full pagewidth
22 max 6.35 4 min 5.7 5.3 0.14 ceramic 1 6.48 2
12.96
5.5 5.0
3
4
3.8 min 5.7 5.3
25.2 max 18.42
13 max
5
6
BeO 3.35 (2x) 3.04 12.2 2.5 4.50 4.05 metal
MBC877
7.5 max
Dimensions in mm. Torque on screw: min. 0.6 Nm; max. 0.75 Nm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed.
Fig.23 SOT119A.
1996 Oct 10
17
Philips Semiconductors
Product specification
VHF linear power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV33F
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 10
18
Philips Semiconductors
Product specification
VHF linear power transistor
NOTES
BLV33F
1996 Oct 10
19
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127041/1200/01/pp20
Date of release: 1996 Oct 10
Document order number:
9397 750 01036

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